Datasheet4U Logo Datasheet4U.com

NP110N04PDG - N-CHANNEL POWER MOS FET

Description

The NP110N04PDG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Channel temperature 175 degree rating.
  • Super low on-state resistance RDS(on)1 = 1.8 mΩ MAX. (VGS = 10 V, ID = 55 A) RDS(on)2 = 3.2 mΩ MAX. (VGS = 4.5 V, ID = 55 A) (TO-263).

📥 Download Datasheet

Datasheet preview – NP110N04PDG

Datasheet Details

Part number NP110N04PDG
Manufacturer Renesas Electronics
File Size 165.43 KB
Description N-CHANNEL POWER MOS FET
Datasheet download datasheet NP110N04PDG Datasheet
Additional preview pages of the NP110N04PDG datasheet.

📁 Similar Datasheet

  • NP100P02D6 - 20V P-Channel Enhancement Mode MOSFET (natlinear)
  • NP100P04PDG - MOS FIELD EFFECT TRANSISTOR (NEC)
  • NP100P04PLG - MOS FIELD EFFECT TRANSISTOR (NEC)
  • NP100P06PDG - P-Channel 60V MOSFET (VBsemi)
  • NP100P06PDG - MOS FIELD EFFECT TRANSISTOR (NEC)
  • NP100P06PLG - MOS FIELD EFFECT TRANSISTOR (NEC)
  • NP10C14 - Transient Surge Suppressors (Shindengen Electric)
  • NP120N03D6 - 30V N-Channel Enhancement Mode MOSFET (natlinear)
  • NP12N04ER - 40V N-Channel Enhancement Mode MOSFET (natlinear)
  • NP12N30G - 300V N-Channel Enhancement Mode MOSFET (natlinear)
Other Datasheets by Renesas

Full PDF Text Transcription

Click to expand full text
DATA SHEET MOS FIELD EFFECT TRANSISTOR NP110N04PDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP110N04PDG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING NP110N04PDG-E1-AZ Note Pure Sn (Tin) NP110N04PDG-E2-AZ Note Note See “TAPE INFORMATION” PACKING Tape 800 p/reel PACKAGE TO-263 (MP-25ZP) typ. 1.5 g FEATURES • Channel temperature 175 degree rating • Super low on-state resistance RDS(on)1 = 1.8 mΩ MAX. (VGS = 10 V, ID = 55 A) RDS(on)2 = 3.2 mΩ MAX. (VGS = 4.
Published: |