Datasheet4U Logo Datasheet4U.com

NP110N04PDG - N-CHANNEL POWER MOS FET

General Description

The NP110N04PDG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Channel temperature 175 degree rating.
  • Super low on-state resistance RDS(on)1 = 1.8 mΩ MAX. (VGS = 10 V, ID = 55 A) RDS(on)2 = 3.2 mΩ MAX. (VGS = 4.5 V, ID = 55 A) (TO-263).

📥 Download Datasheet

Full PDF Text Transcription for NP110N04PDG (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NP110N04PDG. For precise diagrams, and layout, please refer to the original PDF.

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP110N04PDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP110N04PDG is N-channel MOS Field Effect Transistor designed for hig...

View more extracted text
NP110N04PDG is N-channel MOS Field Effect Transistor designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER LEAD PLATING NP110N04PDG-E1-AZ Note Pure Sn (Tin) NP110N04PDG-E2-AZ Note Note See “TAPE INFORMATION” PACKING Tape 800 p/reel PACKAGE TO-263 (MP-25ZP) typ. 1.5 g FEATURES • Channel temperature 175 degree rating • Super low on-state resistance RDS(on)1 = 1.8 mΩ MAX. (VGS = 10 V, ID = 55 A) RDS(on)2 = 3.2 mΩ MAX. (VGS = 4.

More Datasheets from Renesas

Part Number Description
NP110N04PUK N-Channel MOSFET
NP110N03PUG N-CHANNEL POWER MOS FET
NP110N055PUG N-CHANNEL POWER MOS FET
NP110N055PUJ N-CHANNEL POWER MOS FET
NP110N055PUK N-Channel MOSFET
NP119N04NUK N-Channel MOSFET
NP100N04NUJ MOS FIELD EFFECT TRANSISTOR
NP100N04PUK MOS FIELD EFFECT TRANSISTOR
NP100N055PUK MOS FIELD EFFECT TRANSISTOR
NP100P06PDG P-channel Power MOSFET