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NP119N04NUK - N-Channel MOSFET

Description

The NP119N04NUK is N-channel MOS Field Effect Transistors designed for high current switching applications.

Features

  • Super low on-state resistance RDS(on) = 2.15 mΩ MAX. (VGS = 10 V, ID = 60 A).
  • Low Ciss: Ciss = 7400 pF TYP. (VDS = 25 V).
  • Designed for automotive.

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Full PDF Text Transcription

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Preliminary Data Sheet NP119N04NUK 40 V – 120 A – N-channel Power MOS FET Application: Automotive R07DS1252EJ0100 Rev.1.00 Mar 30, 2015 Description The NP119N04NUK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 2.15 mΩ MAX. (VGS = 10 V, ID = 60 A) • Low Ciss: Ciss = 7400 pF TYP. (VDS = 25 V) • Designed for automotive application and AEC-Q101 qualified Ordering Information Part No.
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