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NP16N06QLK - Dual N-Channel Power MOSFET

Datasheet Summary

Description

NP16N06QLK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super low on-state resistance  RDS(on)1 = 39 m MAX. (VGS = 10 V, ID = 8 A)  RDS(on)2 = 60 m MAX. (VGS = 4.5 V, ID = 4 A).
  • Low Ciss: Ciss = 500 pF TYP. (VDS = 25 V).
  • Designed for automotive.

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Datasheet preview – NP16N06QLK

Datasheet Details

Part number NP16N06QLK
Manufacturer Renesas
File Size 542.32 KB
Description Dual N-Channel Power MOSFET
Datasheet download datasheet NP16N06QLK Datasheet
Additional preview pages of the NP16N06QLK datasheet.

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Full PDF Text Transcription

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NP16N06QLK 60 V – 16 A – Dual N-channel Power MOS FET Application: Automotive Data Sheet R07DS1290EJ0200 Rev. 2.00 May 24, 2018 Description NP16N06QLK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance  RDS(on)1 = 39 m MAX. (VGS = 10 V, ID = 8 A)  RDS(on)2 = 60 m MAX. (VGS = 4.5 V, ID = 4 A)  Low Ciss: Ciss = 500 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified  Small size package 8-pin HSON dual Outline Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation.
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