NP23N06YDG Description
The NP23N06YDG is N-channel MOS Field Effect Transistor designed for high current switching applications.
NP23N06YDG Key Features
- Low on-state resistance ⎯ RDS(on) = 27 mΩ MAX. (VGS = 10 V, ID = 11.5 A)
- Low Ciss: Ciss = 1200 pF TYP. (VDS = 25 V, VGS = 0 V)
- Logic level drive type
- Designed for automotive application and AEC-Q101 qualified
- Small size package 8-pin HSON