NP29N06QDK Datasheet | Renesas

Data Sheet 60 V - 30 A - Dual N-channel Power MOS FET Application: Automotive R07DS1330EJ0200 Rev.2.00 May 24, 2018 Description NP29N06QDK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications. Features - Super low on-state resistance  RDS(on)1 = 20 m MAX. (VGS = 10 V, ID = 15 A)  RDS(on)2 = 30 m MAX. (VGS = 4.5 V, ID = 7.5 A) - Low Ciss: Ciss = 1000 p F TYP. (VDS = 25 V) - Designed for automotive application and AEC-Q101 qualified - Small size package 8-pin HSON dual Outline Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Ordering Information Part No. Lead Plating Packing NP29N06QDK-E1-AY - 1 Pure Sn (Tin) Tape 2500 p/reel Taping (E1 type) NP29N06QDK-E2-AY - 1 Taping (E2 type) Note: - 1. Pb-free (This product does not contain Pb in the external electrode) Package 8-pin HSON dual R07DS1330EJ0200 Rev.2.00 May 24,...