NP29N06QDK Description
NP29N06QDK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications.
NP29N06QDK Key Features
- Super low on-state resistance RDS(on)1 = 20 m MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 30 m MAX. (VGS = 4.5 V, ID =
- Low Ciss: Ciss = 1000 pF TYP. (VDS = 25 V)
- Designed for automotive application and AEC-Q101 qualified
- Small size package 8-pin HSON dual