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NP40N10VDF Datasheet N-channel Power Mos Fet

Manufacturer: Renesas

Overview: Preliminary Data Sheet NP40N10YDF, NP40N10VDF, NP40N10PDF 100 V – 40 A – N-channel Power MOS FET Application: Automotive R07DS0361EJ0201 Rev.2.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

Key Features

  • Low on-state resistance ⎯ RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10YDF) ⎯ RDS(on) = 26 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10VDF) ⎯ RDS(on) = 27 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10PDF).
  • Low Ciss: Ciss = 2100 pF TYP. (VDS = 25 V, VGS = 0 V).
  • Logic level drive type.
  • Designed for automotive.

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