NP40N10VDF
NP40N10VDF is N-channel Power MOS FET manufactured by Renesas.
- Part of the NP40N10YDF comparator family.
- Part of the NP40N10YDF comparator family.
Preliminary Data Sheet
NP40N10YDF, NP40N10VDF, NP40N10PDF
100 V
- 40 A
- N-channel Power MOS FET Application: Automotive
R07DS0361EJ0201 Rev.2.01
May 13, 2013
Description
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
- Low on-state resistance ⎯ RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10YDF) ⎯ RDS(on) = 26 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10VDF) ⎯ RDS(on) = 27 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10PDF)
- Low Ciss: Ciss = 2100 p F TYP. (VDS = 25 V, VGS = 0 V)
- Logic level drive type
- Designed for automotive application and AEC-Q101 qualified
Outline
Drain
Gate
Body Diode
Source
8-pin HSON
87 6 5
TO-252
TO-263
2 34 1
2 3
3 1
1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain
1. Gate 2. Drain 3. Source 4. Fin (Drain)
1. Gate 2. Drain 3. Source 4. Fin (Drain)
Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has...
