NP40N10YDF Datasheet | Renesas

Preliminary Data Sheet NP40N10YDF, NP40N10VDF, NP40N10PDF 100 V - 40 A - N-channel Power MOS FET Application: Automotive R07DS0361EJ0201 Rev.2.01 May 13, 2013 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features - Low on-state resistance ⎯ RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10YDF) ⎯ RDS(on) = 26 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10VDF) ⎯ RDS(on) = 27 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10PDF) - Low Ciss: Ciss = 2100 p F TYP. (VDS = 25 V, VGS = 0 V) - Logic level drive type - Designed for automotive application and AEC-Q101 qualified Outline Drain Gate Body Diode Source 8-pin HSON 87 6 5 TO-252 TO-263 2 34 1 2 3 3 1 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain 1. Gate 2. Drain 3. Source 4. Fin (Drain) 1. Gate 2. Drain 3. Source 4. Fin (Drain) Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has...