Datasheet Summary
-40V
- -50A
- P-channel Power MOS FET Application : Automotive
R07DS0241EJ0101 Rev.1.01
May. 20, 2022
Description
This product is P-channel MOS Field Effect Transistor designed for high current switching applications.
Features
- Super low on-state resistance : RDS(on) = 9.6 m Max. ( VGS = -10 V, ID = -25 A ) RDS(on) = 15 m Max. ( VGS = -4.5 V, ID = -25 A )
- Low input capacitance : Ciss = 3800 pF Typ.
- Built-in gate protection diode
- Designed for automotive application and AEC-Q101 qualified.
- Pb-free (This product does not contain Pb in the external electrode)
Outline
Drain
1 2 3 1. Gate 2. Drain 3. Source 4. Drain(Fin)
MP-3ZK (TO-252)
Absolute Maximum...
