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NP50P04SLG - P-Channel Power MOSFET

General Description

This product is P-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Super low on-state resistance : RDS(on) = 9.6 m Max. ( VGS = -10 V, ID = -25 A ) RDS(on) = 15 m Max. ( VGS = -4.5 V, ID = -25 A ).
  • Low input capacitance : Ciss = 3800 pF Typ.
  • Built-in gate protection diode.
  • Designed for automotive.

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Full PDF Text Transcription for NP50P04SLG (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NP50P04SLG. For precise diagrams, and layout, please refer to the original PDF.

NP50P04SLG -40V – -50A – P-channel Power MOS FET Application : Automotive Datasheet R07DS0241EJ0101 Rev.1.01 May. 20, 2022 Description This product is P-channel MOS Field...

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Rev.1.01 May. 20, 2022 Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance : RDS(on) = 9.6 m Max. ( VGS = -10 V, ID = -25 A ) RDS(on) = 15 m Max. ( VGS = -4.5 V, ID = -25 A )  Low input capacitance : Ciss = 3800 pF Typ.  Built-in gate protection diode  Designed for automotive application and AEC-Q101 qualified.  Pb-free (This product does not contain Pb in the external electrode) Outline 4 Drain 1 2 3 1. Gate 2. Drain 3. Source 4.

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