Renesas Electronics NP50P04SLG
This product is P-channel MOS Field Effect Transistor designed for high current switching applications.| Part No. | NP50P04SLG |
|---|---|
| Datasheet | NP50P04SLG Download |
| Manufacturer |  Renesas Electronics |
| Description | P-Channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
● Super low on-state resistance : RDS(on) = 9.6 m Max. ( VGS = -10 V, ID = -25 A ) RDS(on) = 15 m Max. ( VGS = -4.5 V, ID = -25 A )● Low input capacitance : Ciss = 3800 pF Typ.
● Built-in gate protection diode
● Designed for automotive application and AEC-Q101 qualified.
● Pb-free (This product does not contain Pb in the external electrode) Outline 4 Drain 1 2 3 1. Gate 2. Drain 3. Source 4. Drain(Fin) MP-3ZK (TO-252)
ABSOLUTE MAXIMUM RATINGS
Gate Source Equivalent circuit Item Symbol Ratings Drain to Source Voltage (VGS = 0 V) VDSS -40 Gate to Source Voltage (VDS = 0 V) VGSS 20 Drain Current (DC) (Tc = 25 °C) ID(DC) 50 Drain Current (pulse) ID(pulse) Notes1 150 Total Power Dissipation (Tc = 25 °C) PT1 84 Total Power Dissipation (Ta = 25 °C) PT2 1.2 Channel Temperature Tch 175 Storage Temperature Tstg -55 to 175 Single Avalanche Current I Notes2 AS 37 Single Avalanche Energy E Notes2 AS 136 Notes 1. PW 10 s , Duty Cycle 1% 2. Starting Tch=25℃ , VDD = -20...
