NP50P06KDG
Overview
This product is P-channel MOS Field Effect Transistor designed for high current switching applications.
- Super low on-state resistance : RDS(on) = 17 m Max. ( VGS = -10 V, ID = -25 A ) RDS(on) = 23 m Max. ( VGS = -4.5 V, ID = -25 A )
- Low input capacitance : Ciss = 5000 pF Typ.
- Designed for automotive application and AEC-Q101 qualified.
- Pb-free (This product does not contain Pb in the external electrode) Outline 4 Drain 123
- Drain
- Source
- Drain(Fin)
