NP60N06PDK Overview
Description
NP60N06PDK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Key Features
- Super low on-state resistance RDS(on)1 = 7.9 m MAX. (VGS = 10 V, ID = 30 A)
- Low Ciss: Ciss = 2400 pF TYP. (VDS = 25 V)
