NP90N06VLG Datasheet | Renesas

DATA SHEET MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP90N06VLG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP90N06VLG-E1-AY Note NP90N06VLG-E2-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tape 2500 p/reel Note Pb-free (This product does not contain Pb in external electrode.) PACKAGE TO-252 (MP-3ZP) typ. 0.27 g Features - Logic level - Built-in gate protection diode - Super low on-state resistance RDS(on)1 = 7.8 mΩ MAX. (VGS = 10 V, ID = 45 A) RDS(on)2 = 12.5 mΩ MAX. (VGS = 4.5 V, ID = 35 A) - High current rating ID(DC) = ±90 A - Low input capacitance Ciss =...