natlinear NP90N03G
The NP90N03G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.| Part No. | NP90N03G |
|---|---|
| Datasheet | NP90N03G Download |
| Manufacturer | natlinear |
| Description | 30V N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Schematic diagram It can be used in a wide variety of applications.GENERAL FEATURES
● VDS =30V，ID =90A RDS(ON)(Typ.)=3.8mΩ @VGS=10V RDS(ON)(Typ.)=5.1mΩ @VGS=4.5V High power and current handing capability● Lead free product is acquired
● Surface mount package Marking and pin assignment Application
● Load switch Package
● TO-252-2L XXXX—Wafer Information YYYY—Quality Code Ordering Information Part Number NP90N03G-G Storage Temperature -55°C to +150°C Package TO-252-2L Devices Per Reel 2500
ABSOLUTE MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) parameter Drain-source voltage Gate-source voltage Continuous Drain Current TC=25°C TC=100°C Pulsed Drain Current Avalanche Current Avalanche energy( L=0.5mH)（note1） Maximum power dissipation TC=25°C TC=100°C Operating junction Temperature range symbol limit unit VDS 30 V VGS ±20 V 90 ID A 70 IDP 360 A IAS 30 A EAS 112 mJ 85 PD W 44 Tj -55—150 ℃ Rev.1.1 —May.17. 2021 1 NP90N03GELECTRICAL CHARACTERISTICS
(TA=25℃ unless otherwise not...
