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NP90N03VLG Datasheet Mos Field Effect Transistor

Manufacturer: Renesas

Overview: NP90N03VLG MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0129EJ0100 Rev.1.

General Description

The NP90N03VLG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Low on-state resistance ⎯ RDS(on)1 = 3.2 mΩ MAX. (VGS = 10 V, ID = 45 A) ⎯ RDS(on)2 = 8.0 mΩ MAX. (VGS = 4.5 V, ID = 35 A).
  • Low input capacitance ⎯ Ciss = 5000 pF TYP. (VDS = 25 V, VGS = 0 V).
  • Designed for automotive.

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