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PF08122B - MOS FET Power Amplifier Module

Datasheet Summary

Features

  • All in one including output matching circuit.
  • Simple external circuit.
  • Simple power control.
  • High gain 3stage amplifier : 0 dBm input Typ.
  • Lead less thin & Small package : 8 × 13.75 × 1.6 mm Typ.
  • High efficiency : 55% Typ at 35.0 dBm for E-GSM 50% Typ at 32.5 dBm for DCS1800.
  • Lower consume current at low power 100 mA Typ at 7 dBm for E-GSM 60 mA Typ at 5 dBm for DCS1800 Pin Arrangement.
  • RF-K-8A 5 G6 8 7 G 12 G 4 G 3 1: P.

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Datasheet Details

Part number PF08122B
Manufacturer Renesas
File Size 171.37 KB
Description MOS FET Power Amplifier Module
Datasheet download datasheet PF08122B Datasheet
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Full PDF Text Transcription

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To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
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