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PS2501-1 Datasheet NPN Silicon Phototransistor

Manufacturer: Renesas

Overview: Data Sheet PS2501-1, -4, PS2501L-1, -4 HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE R08DS0202EJ0100 Rev.1.

Datasheet Details

Part number PS2501-1
Manufacturer Renesas
File Size 5.07 MB
Description NPN silicon phototransistor
Datasheet PS2501-1-Renesas.pdf

General Description

The PS2501-1, -4 and PS2501L-1, -4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor.

The PS2501-1, -4 are in a plastic DIP (Dual In-line Package) and the PS2501L-1, -4 are lead bending type (Gull-wing) for surface mount.

Key Features

  • High isolation voltage (BV = 5 000 Vr. m. s. ).
  • High collector to emitter voltage (VCEO = 80 V).
  • High-speed switching (tr = 3 s TYP. , tf = 5 s TYP. ).
  • Ordering number of taping product: PS2501L-1-F3 : 2 000 pcs/reel.
  • Pb-Free product.
  • Safety standards.
  • UL approved: UL1577, Double protection.

PS2501-1 Distributor