PS2535-1 - NPN silicon Darlington-connected phototransistor

Product Overview

Renesas

Datasheet Details

Part number	PS2535-1
Manufacturer	Renesas
File Size	291.59 KB
Description	NPN silicon Darlington-connected phototransistor
Datasheet	PS2535-1 Datasheet
Additional preview pages of the PS2535-1 datasheet.

Product details

Description

The PS2535-1 and PS2535L-1 are optically coupled isolator containing a GaAs light emitting diode and an NPN silicon Darlington-connected phototransistor.

Features

High collector to emitter voltage (VCEO = 350 V).
High isolation voltage (BV = 5 000 Vr. m. s. ).
High current transfer ratio (CTR = 1 500 % TYP. ).
Embossed tape product: PS2535L-1-F3: 2 000 pcs/reel.
Pb-free product.
Safety standards.
UL approved: UL1577, Double protection.
BSI approved: BS EN 62368-1, Reinforced insulation.
VDE approved: DIN EN 60747-5-5 (Option) PIN.

📁 Similar Datasheet

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Other Datasheets by Renesas

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Published: Feb 8, 2025 |