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PS2535-1 - NPN silicon Darlington-connected phototransistor

Description

The PS2535-1 and PS2535L-1 are optically coupled isolator containing a GaAs light emitting diode and an NPN silicon Darlington-connected phototransistor.

Features

  • High collector to emitter voltage (VCEO = 350 V).
  • High isolation voltage (BV = 5 000 Vr. m. s. ).
  • High current transfer ratio (CTR = 1 500 % TYP. ).
  • Embossed tape product: PS2535L-1-F3: 2 000 pcs/reel.
  • Pb-free product.
  • Safety standards.
  • UL approved: UL1577, Double protection.
  • BSI approved: BS EN 62368-1, Reinforced insulation.
  • VDE approved: DIN EN 60747-5-5 (Option) PIN.

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Datasheet Details

Part number PS2535-1
Manufacturer Renesas
File Size 291.59 KB
Description NPN silicon Darlington-connected phototransistor
Datasheet download datasheet PS2535-1 Datasheet

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Full PDF Text Transcription

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PS2535-1, PS2535L-1 HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE Data Sheet R08DS0199EJ0101 Rev.1.01 Nov 4, 2022 DESCRIPTION The PS2535-1 and PS2535L-1 are optically coupled isolator containing a GaAs light emitting diode and an NPN silicon Darlington-connected phototransistor. High isolation voltage between the I/O, the high voltage between the collector and emitter of the transistor, and Darlington transistor output enables low-current input. The PS2535-1 is a plastic DIP (Dual In-line Package) model for the pin Insertion mounting and the PS2535L1 is a Gull-wing lead bending model modified from the PS2535-1 for the surface mounting. FEATURES • High collector to emitter voltage (VCEO = 350 V) • High isolation voltage (BV = 5 000 Vr.m.s.
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