• Part: PS2535L-1
  • Description: NPN silicon Darlington-connected phototransistor
  • Manufacturer: Renesas
  • Size: 291.59 KB
Download PS2535L-1 Datasheet PDF
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Datasheet Summary

PS2535-1, PS2535L-1 HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE Data Sheet R08DS0199EJ0101 Rev.1.01 Nov 4, 2022 DESCRIPTION The PS2535-1 and PS2535L-1 are optically coupled isolator containing a GaAs light emitting diode and an NPN silicon Darlington-connected phototransistor. High isolation voltage between the I/O, the high voltage between the collector and emitter of the transistor, and Darlington transistor output enables low-current input. The PS2535-1 is a plastic DIP (Dual In-line Package) model for the pin Insertion mounting and the PS2535L1 is a Gull-wing lead bending model modified from the PS2535-1 for the surface mounting. Features - High collector to emitter...