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PS2535L-1

Manufacturer: Renesas

PS2535L-1 datasheet by Renesas.

This datasheet includes multiple variants, all published together in a single manufacturer document.

PS2535L-1 datasheet preview

PS2535L-1 Datasheet Details

Part number PS2535L-1
Datasheet PS2535L-1 PS2535-1 Datasheet (PDF)
File Size 291.59 KB
Manufacturer Renesas
Description NPN silicon Darlington-connected phototransistor
PS2535L-1 page 2 PS2535L-1 page 3

PS2535L-1 Overview

The PS2535-1 and PS2535L-1 are optically coupled isolator containing a GaAs light emitting diode and an NPN silicon Darlington-connected phototransistor. High isolation voltage between the I/O, the high voltage between the collector and emitter of the transistor, and Darlington transistor output enables low-current input. The PS2535-1 is a plastic DIP (Dual In-line Package) model for the pin Insertion mounting and...

PS2535L-1 Key Features

  • High collector to emitter voltage (VCEO = 350 V)
  • High isolation voltage (BV = 5 000 Vr.m.s.)
  • High current transfer ratio (CTR = 1 500 % TYP.)
  • Embossed tape product: PS2535L-1-F3: 2 000 pcs/reel
  • Pb-free product
  • Safety standards
  • UL approved: UL1577, Double protection
  • BSI approved: BS EN 62368-1, Reinforced insulation
  • VDE approved: DIN EN 60747-5-5 (Option)

PS2535L-1 from other manufacturers

View PS2535L-1 datasheet index

Brand Logo Part Number Description Other Manufacturers
NEC Logo PS2535L-1 HIGH COLLECTOR TO EMITTER VOLTAGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SERIES NEC
Renesas logo - Manufacturer

More Datasheets from Renesas

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PS2502-1 HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR
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PS2535L-1 Distributor

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