• Part: PS2535L-1
  • Description: NPN silicon Darlington-connected phototransistor
  • Category: Transistor
  • Manufacturer: Renesas
  • Size: 291.59 KB
PS2535L-1 Datasheet (PDF) Download
Renesas
PS2535L-1

Overview

The PS2535-1 and PS2535L-1 are optically coupled isolator containing a GaAs light emitting diode and an NPN silicon Darlington-connected phototransistor. High isolation voltage between the I/O, the high voltage between the collector and emitter of the transistor, and Darlington transistor output enables low-current input.

  • High collector to emitter voltage (VCEO = 350 V)
  • High isolation voltage (BV = 5 000 Vr.m.s.)
  • High current transfer ratio (CTR = 1 500 % TYP.)
  • Embossed tape product: PS2535L-1-F3: 2 000 pcs/reel
  • Pb-free product
  • Safety standards
  • UL approved: UL1577, Double protection
  • BSI approved: BS EN 62368-1, Reinforced insulation
  • VDE approved: DIN EN 60747-5-5 (Option)