R1LP0408CSC-5SC Datasheet PDF (4M SRAM) | Download Renesas R1LP0408CSC-5SC

R1LP0408CSC-5SC - 4M SRAM

This page provides the datasheet information for the R1LP0408CSC-5SC, a member of the R1LP0408CSP-5SC 4M SRAM family.

Description

The R1LP0408C-C is a 4-Mbit static RAM organized 512-kword × 8-bit.

R1LP0408C-C Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell).

Features

Single 5 V supply: 5 V ± 10%.
Access time: 55/70 ns (max).
Power dissipation:  Active: 10 mW/MHz (typ)  Standby: 4 µW (typ).
Completely static memory.  No clock or timing strobe required.
Equal access and cycle times.
Common data input and output.  Three state output.
Directly TTL compatible.  All inputs and outputs.
Battery backup operation.
Operating temperature:.
20 to +70°C Rev.1.00, Aug.01.2003,.

Datasheet Details

Part number	R1LP0408CSC-5SC
Manufacturer	Renesas
File Size	84.64 KB
Description	4M SRAM
Datasheet	R1LP0408CSC-5SC Datasheet
Additional preview pages of the R1LP0408CSC-5SC datasheet.

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Full PDF Text Transcription

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R1LP0408C-C Series 4 M SRAM (512-kword × 8-bit) REJ03C0077-0100Z Rev. 1.00 Aug.01.2003 Description The R1LP0408C-C is a 4-Mbit static RAM organized 512-kword × 8-bit. R1LP0408C-C Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The R1LP0408C-C Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It has packaged in 32-pin SOP, 32-pin TSOP II. Features • Single 5 V supply: 5 V ± 10% • Access time: 55/70 ns (max) • Power dissipation:  Active: 10 mW/MHz (typ)  Standby: 4 µW (typ) • Completely static memory.  No clock or timing strobe required • Equal access and cycle times • Common data input and output.

Published: Nov 7, 2014 |