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R1LV0216BSB Datasheet 2mb Advanced Lpsram

Manufacturer: Renesas

Overview: R1LV0216BSB 2Mb Advanced LPSRAM (128k word x 16bit) R10DS0273EJ0101 Rev.1.01 2020.2.

General Description

The R1LV0216BSB is a family of low voltage 2-Mbit static RAMs organized as 131,072-word by 16-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies.

The R1LV0216BSB has realized higher density, higher performance and low power consumption.

The R1LV0216BSB is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives.

Key Features

  • Single 2.7V~3.6V power supply.
  • Small stand-by current: 1µA (3.0V, typical).
  • No clocks, No refresh.
  • All inputs and outputs are TTL compatible.
  • Easy memory expansion by CS#, LB# and UB#.
  • Common Data I/O.
  • Three-state outputs: OR-tie Capability.
  • OE# prevents data contention on the I/O bus Ordering Information Orderable part name R1LV0216BSB-5SI#B1 R1LV0216BSB-5SI#S1 Access time 55 ns Temperature range -40 ~ +85°C Package 400-mil 44pin plastic TSOP (II).

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