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R1LV0416DBG-7LI - 4M SRAM

Download the R1LV0416DBG-7LI datasheet PDF. This datasheet also covers the R1LV0416D variant, as both devices belong to the same 4m sram family and are provided as variant models within a single manufacturer datasheet.

General Description

The R1LV0416D is a 4-Mbit static RAM organized 256-kword × 16-bit, fabricated by Renesas's high-performance 0.15µm CMOS and TFT technologies.

R1LV0416D Series has realized higher density, higher performance and low power consumption.

Key Features

  • Single 3.0 V supply: 2.7 V to 3.6 V.
  • Fast access time: 55/70 ns (max).
  • Power dissipation:  Standby: 3 µW (typ) (VCC = 3.0 V).
  • Equal access and cycle times.
  • Common data input and output.  Three state output.
  • Battery backup operation.  2 chip selection for battery backup.
  • Temperature Range: -40 to +85°C Rev.1.00, May.24.2007, page 1 of 15 R1LV0416D Series Ordering Information Type No. R1LV0416DSB-5SI R1LV0416DSB-7LI R1LV0416DBG-.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (R1LV0416D-Renesas.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
R1LV0416C-I Wide Temperature Range Version 4M SRAM Renesas Technology
R1LV0416C-I 4M SRAM Renesas Technology
R1LV0416CBG-I Wide Temperature Range Version 4M SRAM Renesas Technology
R1LV0416CSB-5SI 4M SRAM Renesas Technology
R1LV0416CSB-7LI 4M SRAM Renesas Technology

Other Datasheets by Renesas

Part Number Description
R1LV0416DBG-5SI 4M SRAM
R1LV0416D 4M SRAM
R1LV0416DSB-5SI 4M SRAM
R1LV0416DSB-7LI 4M SRAM
R1LV0414D 4M SRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
R1LV0416D Series 4M SRAM (256-kword × 16-bit) REJ03C0311-0100 Rev.1.00 May.24.2007 Description The R1LV0416D is a 4-Mbit static RAM organized 256-kword × 16-bit, fabricated by Renesas's high-performance 0.15µm CMOS and TFT technologies. R1LV0416D Series has realized higher density, higher performance and low power consumption. The R1LV0416D Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. The R1LV0416D Series is packaged in a 44-pin thin small outline mount device, or a 48-ball fine pitch ball grid array. Features • Single 3.0 V supply: 2.7 V to 3.6 V • Fast access time: 55/70 ns (max) • Power dissipation:  Standby: 3 µW (typ) (VCC = 3.0 V) • Equal access and cycle times • Common data input and output.