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R1LV0416D - 4M SRAM

General Description

The R1LV0416D is a 4-Mbit static RAM organized 256-kword × 16-bit, fabricated by Renesas's high-performance 0.15µm CMOS and TFT technologies.

R1LV0416D Series has realized higher density, higher performance and low power consumption.

Key Features

  • Single 3.0 V supply: 2.7 V to 3.6 V.
  • Fast access time: 55/70 ns (max).
  • Power dissipation:  Standby: 3 µW (typ) (VCC = 3.0 V).
  • Equal access and cycle times.
  • Common data input and output.  Three state output.
  • Battery backup operation.  2 chip selection for battery backup.
  • Temperature Range: -40 to +85°C Rev.1.00, May.24.2007, page 1 of 15 R1LV0416D Series Ordering Information Type No. R1LV0416DSB-5SI R1LV0416DSB-7LI R1LV0416DBG-.

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Other Datasheets by Renesas

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Full PDF Text Transcription (Reference)

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R1LV0416D Series 4M SRAM (256-kword × 16-bit) REJ03C0311-0100 Rev.1.00 May.24.2007 Description The R1LV0416D is a 4-Mbit static RAM organized 256-kword × 16-bit, fabricated by Renesas's high-performance 0.15µm CMOS and TFT technologies. R1LV0416D Series has realized higher density, higher performance and low power consumption. The R1LV0416D Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. The R1LV0416D Series is packaged in a 44-pin thin small outline mount device, or a 48-ball fine pitch ball grid array. Features • Single 3.0 V supply: 2.7 V to 3.6 V • Fast access time: 55/70 ns (max) • Power dissipation:  Standby: 3 µW (typ) (VCC = 3.0 V) • Equal access and cycle times • Common data input and output.