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R1LV0416CBG-I - Wide Temperature Range Version 4M SRAM

General Description

The R1LV0416CBG-I is a 4-Mbit static RAM organized 256-kword × 16-bit.

The R1LV0416C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell).

Key Features

  • Single 2.5 V and 3.0 V supply: 2.2 V to 3.6 V.
  • Fast access time: 55/70 ns (max).
  • Power dissipation:  Active: 5.0 mW/MHz (typ)(VCC = 2.5 V) : 6.0 mW/MHz (typ) (VCC = 3.0 V)  Standby: 1.25 µW (typ) (VCC = 2.5 V) : 1.5 µW (typ) (VCC = 3.0 V).
  • Completely static memory.  No clock or timing strobe required.
  • Access and cycle times are equal.
  • Common data input and output.  Three state output.
  • Battery backup operation.  2 chip selectio.

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Datasheet Details

Part number R1LV0416CBG-I
Manufacturer Renesas
File Size 181.05 KB
Description Wide Temperature Range Version 4M SRAM
Datasheet download datasheet R1LV0416CBG-I Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com R1LV0416CBG-I Series Wide Temperature Range Version 4M SRAM (256-kword × 16-bit) REJ03C0259-0001 Preliminary Rev.0.01 Jan.11.2005 Description The R1LV0416CBG-I is a 4-Mbit static RAM organized 256-kword × 16-bit. The R1LV0416C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The R1LV0416CBG-I Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It has packaged in 48-pin CSP (0.75 mm ball pitch). Features • Single 2.5 V and 3.0 V supply: 2.2 V to 3.6 V • Fast access time: 55/70 ns (max) • Power dissipation:  Active: 5.0 mW/MHz (typ)(VCC = 2.5 V) : 6.0 mW/MHz (typ) (VCC = 3.0 V)  Standby: 1.25 µW (typ) (VCC = 2.