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R1LV0416C-I Datasheet 4m Sram

Manufacturer: Renesas

Overview: R1LV0416C-I Series Wide Temperature Range Version 4 M SRAM (256-kword × 16-bit) REJ03C0105-0100Z Rev. 1.00 Aug.05.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The R1LV0416C-I is a 4-Mbit static RAM organized 256-kword × 16-bit.

R1LV0416C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell).

The R1LV0416C-I Series offers low power standby power dissipation;

Key Features

  • Single 2.5 V and 3.0 V supply: 2.2 V to 3.6 V.
  • Fast access time: 55/70 ns (max).
  • Power dissipation:  Active: 5.0 mW/MHz (typ)(VCC = 2.5 V) : 6.0 mW/MHz (typ) (VCC = 3.0 V)  Standby: 1.25 µW (typ) (VCC = 2.5 V) : 1.5 µW (typ) (VCC = 3.0 V).
  • Completely static memory.  No clock or timing strobe required.
  • Equal access and cycle times.
  • Common data input and output.  Three state output.
  • Battery backup operation.  2 chip selection for.

Similar Datasheet

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Part Number Description
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R1LV0416C-I Distributor