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R1LV0416C-I - 4M SRAM

Download the R1LV0416C-I datasheet PDF. This datasheet also covers the R1LV0416CSB-5SI variant, as both devices belong to the same 4m sram family and are provided as variant models within a single manufacturer datasheet.

General Description

The R1LV0416C-I is a 4-Mbit static RAM organized 256-kword × 16-bit.

R1LV0416C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell).

Key Features

  • Single 2.5 V and 3.0 V supply: 2.2 V to 3.6 V.
  • Fast access time: 55/70 ns (max).
  • Power dissipation:  Active: 5.0 mW/MHz (typ)(VCC = 2.5 V) : 6.0 mW/MHz (typ) (VCC = 3.0 V)  Standby: 1.25 µW (typ) (VCC = 2.5 V) : 1.5 µW (typ) (VCC = 3.0 V).
  • Completely static memory.  No clock or timing strobe required.
  • Equal access and cycle times.
  • Common data input and output.  Three state output.
  • Battery backup operation.  2 chip selection for.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (R1LV0416CSB-5SI-RenesasTechnology.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Renesas

Part Number Description
R1LV0416C-I Wide Temperature Range Version 4M SRAM
R1LV0416CBG-I Wide Temperature Range Version 4M SRAM
R1LV0416CSB-5SI 4M SRAM
R1LV0416CSB-7LI 4M SRAM
R1LV0108E 1Mb Advanced LPSRAM (128k word x 8bit)

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
R1LV0416C-I Series Wide Temperature Range Version 4 M SRAM (256-kword × 16-bit) REJ03C0105-0100Z Rev. 1.00 Aug.05.2003 Description The R1LV0416C-I is a 4-Mbit static RAM organized 256-kword × 16-bit. R1LV0416C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The R1LV0416C-I Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It has packaged in 44-pin TSOP II. Features • Single 2.5 V and 3.0 V supply: 2.2 V to 3.6 V • Fast access time: 55/70 ns (max) • Power dissipation:  Active: 5.0 mW/MHz (typ)(VCC = 2.5 V) : 6.0 mW/MHz (typ) (VCC = 3.0 V)  Standby: 1.25 µW (typ) (VCC = 2.5 V) : 1.5 µW (typ) (VCC = 3.0 V) • Completely static memory.