R1LV0416CSB-7LI - 4M SRAM

This page provides the datasheet information for the R1LV0416CSB-7LI, a member of the R1LV0416CSB-5SI 4M SRAM family.

Product Overview

Renesas Technology

Datasheet Details

Part number	R1LV0416CSB-7LI
Manufacturer	Renesas Technology
File Size	96.01 KB
Description	4M SRAM
Datasheet	R1LV0416CSB-7LI Datasheet
Additional preview pages of the R1LV0416CSB-7LI datasheet.

R1LV0416CSB-7LI Product details

Description

The R1LV0416C-I is a 4-Mbit static RAM organized 256-kword × 16-bit.

R1LV0416C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell).

Features

Single 2.5 V and 3.0 V supply: 2.2 V to 3.6 V.
Fast access time: 55/70 ns (max).
Power dissipation:  Active: 5.0 mW/MHz (typ)(VCC = 2.5 V) : 6.0 mW/MHz (typ) (VCC = 3.0 V)  Standby: 1.25 µW (typ) (VCC = 2.5 V) : 1.5 µW (typ) (VCC = 3.0 V).
Completely static memory.  No clock or timing strobe required.
Equal access and cycle times.
Common data input and output.  Three state output.
Battery backup operation.  2 chip selection for.

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Published: Nov 7, 2014 |