• Part: R1LV0416CSB-7LI
  • Description: 4M SRAM
  • Manufacturer: Renesas
  • Size: 96.01 KB
R1LV0416CSB-7LI Datasheet (PDF) Download
Renesas
R1LV0416CSB-7LI

Description

The R1LV0416C-I is a 4-Mbit static RAM organized 256-kword × 16-bit. R1LV0416C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell).

Key Features

  • Single 2.5 V and 3.0 V supply: 2.2 V to 3.6 V
  • Fast access time: 55/70 ns (max)
  • Power dissipation:  Active: 5.0 mW/MHz (typ)(VCC = 2.5 V) : 6.0 mW/MHz (typ) (VCC = 3.0 V)  Standby: 1.25 µW (typ) (VCC = 2.5 V) : 1.5 µW (typ) (VCC = 3.0 V)
  • Completely static memory.  No clock or timing strobe required
  • Equal access and cycle times
  • Common data input and output.  Three state output
  • Battery backup operation.  2 chip selection for battery backup
  • Temperature range: -40 to +85°C Rev.1.00, Aug.05.2003, page 1 of 18