RAJ20660AGNP Description
The RAJ20660AGNP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this device suitable for large-current buck converters. The chip also incorporates a high-side bootstrap switch, eliminating the need for an external SBD for this purpose.
RAJ20660AGNP Key Features
- pliant with Intel 6 × 6 DrMOS Specification
- Built-in power MOS FET suitable for Ultrabook, Notebook, Desktop, Server application
- Low-side MOS FET with built-in SBD for lower loss and reduced ringing
- Built-in driver circuit which matches the power MOS FET
- Built-in tri-state input function which can support a number of PWM controllers
- High-frequency operation (above 1 MHz) possible
- VIN operating-voltage range: 27 Vmax
- Large average output current (DC Max.25 A / AC Max.40 A)
- Achieve low power dissipation
- Controllable driver: Remote on/off