RAJ20660AGNP Datasheet | Renesas

Description The RAJ20660AGNP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this device suitable for large-current buck converters. The chip also incorporates a high-side bootstrap switch, eliminating the need for an external SBD for this purpose. Features - pliant with Intel 6 × 6 Dr MOS Specification. - Built-in power MOS FET suitable for Ultrabook, Notebook, Desktop, Server application. - Low-side MOS FET with built-in SBD for lower loss and reduced ringing. - Built-in driver circuit which matches the power MOS FET - Built-in tri-state input function which can support a number of PWM controllers - High-frequency operation (above 1 MHz) possible - VIN operating-voltage range: 27 Vmax - Large average output current (DC Max.25 A / AC Max.40 A) - Achieve low power dissipation - Controllable driver: Remote on/off - Zero current detection for a diode emulation operation - Double thermal protection: Thermal Warning & Thermal Shutdown - Built-in bootstrapping Switch - Small package: QFN40 (6 mm × 6 mm × 0.95 mm) - Pb-free/Halogen-Free Outline THWN DISBL# ZCD_EN# VCIN BOOT Integrated Driver-MOS FET (Dr MOS) QFN40 package 6 mm × 6 mm GH VIN Driver Pad 11 High-side MOS Pad MOS FET Driver VSWH Low-side MOS Pad CGND VDRV GL PGND 31 30 (Bottom view) 20 21 R07DS1071EJ0100 Rev.1.00 May 22, 2013 Page 1 of 15 Block...