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RBA300N10EANS-3UA02 - N-Channel Power MOSFET

Datasheet Summary

Description

Renesas TOLL technology

Features

  • ultra compact, leadless designs for enhanced thermal performance, management, and reliability. Wettable Flank solution support Better Reliability & Ease of Assembly. Renesas new split gate technology provide suitable for use in low RDS(on) and switching capability for high power & high-frequency.

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Datasheet preview – RBA300N10EANS-3UA02

Datasheet Details

Part number RBA300N10EANS-3UA02
Manufacturer Renesas
File Size 372.56 KB
Description N-Channel Power MOSFET
Datasheet download datasheet RBA300N10EANS-3UA02 Datasheet
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Full PDF Text Transcription

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Datasheet RBA300N10EANS-3UA02 REXFET-1 N-Channel Power MOSFET 100V - 340A - 1.5m R07DS1573EJ0100 Rev.1.00 Nov.08.2024 Description Renesas TOLL technology features ultra compact, leadless designs for enhanced thermal performance, management, and reliability. Wettable Flank solution support Better Reliability & Ease of Assembly. Renesas new split gate technology provide suitable for use in low RDS(on) and switching capability for high power & high-frequency application. Features • Standard level gate drive voltage : VGS(th) = 2.0~4.0V • Super Low on-state resistance : RDS(on) = 1.5m Max.
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