Datasheet4U Logo Datasheet4U.com

RBN100N180S2HFWA - IGBT

General Description

and application examples.

Key Features

  • Renesas generation 8th Trench IGBT.
  • Short circuit withstands time (10 s min. ).
  • Optimized for high power.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Renesas

Part Number Description
RBN150N180S2HFWA IGBT
RBN200N180S2HFWA IGBT
RBN25H125S1FPQ-A0 IGBT
RBN25N125S1UFWA IGBT
RBN40H125S1FPQ-A0 IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RBN100N180S2HFWA 1800V - 200A/100A - IGBT Features  Renesas generation 8th Trench IGBT  Short circuit withstands time (10 s min.)  Optimized for high power application  Unsawn wafer Wafer size = 200 mm  Quality grade: Standard Outline Datasheet R07DS1455EJ0100 Rev.1.00 Apr 11th, 2023 wafer 1.Gate 2.Collector(The back) 3.Emitter Absolute Maximum Ratings (Tj = 25°C unless otherwise noted) Item Symbol Ratings Unit Collector to emitter voltage VCES 1800 V Gate to emitter voltage VGES ±30 V Collector current Tc = 25°C IC 200 Notes1 A Tc = 100°C IC 100 Notes1 A Junction temperature Tj 175 Notes2 C Notes: 1. Depends on thermal properties of assembly. 2. Please use this device in the thermal conditions which the junction temperature does not exceed 175C. 3.