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RBN25N125S1UFWA - IGBT

Key Features

  • Renesas generation 8th Trench IGBT.
  • Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25 C).
  • High speed switching.
  • Short circuit withstands time (10 s min. ).

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RBN25N125S1UFWA 1250V - 25A - IGBT Features  Renesas generation 8th Trench IGBT  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25 C)  High speed switching  Short circuit withstands time (10 s min.)  Applications: UPS, Welding, photovoltaic inverters, Power converter system  Unsawn wafer Wafer size = 200 mm  Quality grade: Standard Datasheet R07DS1499EJ0120 Rev.1.20 Oct.18th.2024 Key performance Product name RBN25N125S1UFWA VCES 1250 V IC 25 A Die size 23.46 mm2 (4.60 mm x 5.10 mm) Package Unsawn wafer Outline 2 C G 1 E 3 1. Gate 2. Collector (The back) 3. Emitter Die 2 3 1 3 Wafer Mechanical parameter Chip size Area total Thickness Wafer size Passivation frontside Pad metal Backside metal 4.60 x 5.10 23.46 0.142 typ.