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RJH1CF7RDPQ-80 - High Speed Power Switching

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Description

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Features

  • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.85 V typ. (at IC = 35 A, VGE = 15V, Ta = 25°C).
  • Gate to emitter voltage rating ±30 V.
  • Pb-free lead plating.
  • R07DS0357EJ0100 Rev.1.00 May 12, 2011 Outline.

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Datasheet Details

Part number RJH1CF7RDPQ-80
Manufacturer Renesas
File Size 160.23 KB
Description High Speed Power Switching
Datasheet download datasheet RJH1CF7RDPQ-80 Datasheet
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Preliminary Datasheet RJH1CF7RDPQ-80 Silicon N Channel IGBT High Speed Power Switching Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.85 V typ. (at IC = 35 A, VGE = 15V, Ta = 25°C) • Gate to emitter voltage rating ±30 V • Pb-free lead plating • • • • R07DS0357EJ0100 Rev.1.00 May 12, 2011 Outline RENESAS Package code: PRSS0003ZE-A (Package name: TO-247) C 4 G 1. Gate 2. Collector 3. Emitter 4. Collector E 1 2 3 www.DataSheet.
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