RJH60D5DPQ-A0 Datasheet IGBT

Manufacturer: Renesas

Overview: Preliminary Datasheet RJH60D5DPQ-A0 600 V - 37 A - IGBT Application:.

Datasheet Details

Short circuit withstand time (5 s typ. ).
Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C).
Built in fast recovery diode (100 ns typ. ) in one package.
Trench gate and thin wafer technology.
High speed switching tf = 75 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 37 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0527EJ0100 Rev.1.00 Aug 26, 2011 Outline.