RJH60D5DPM
Overview
- Short circuit withstand time (5 s typ.)
- Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C)
- Built in fast recovery diode (100 ns typ.) in one package
- Trench gate and thin wafer technology
- High speed switching tf = 40 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 37 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0174EJ0200 Rev.2.00 Apr 19, 2012 Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C G
- Collector
- Emitter E 1 2
