Datasheet4U Logo Datasheet4U.com

RJK0330DPB-01 - Silicon N-Channel MOSFET

General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

the incorporation of these circuits, software, and information in the design of your equipment.

Key Features

  • High speed switching.
  • Capable of 4.5 V gate drive.
  • Low drive current.
  • High density mounting.
  • Low on-resistance RDS(on) = 2.1 m typ. (at VGS = 10 V).
  • Pb-free.
  • Halogen-free Outline.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RJK0330DPB Silicon N Channel Power MOS FET Power Switching Renesas Technology
RJK0331DPB Silicon N Channel Power MOS FET Power Switching Renesas Technology
RJK0332DPB Silicon N Channel Power MOS FET Power Switching Renesas Technology
RJK0301DPB Silicon N Channel Power MOS FET Power Switching Renesas Technology
RJK0302DPB Silicon N Channel Power MOS FET Power Switching Renesas Technology

Other Datasheets by Renesas

Part Number Description
RJK0332DPB-01 Silicon N-Channel MOS FET
RJK0305DPB-02 Silicon N-Channel Power MOSFET
RJK0323JPD Silicon N-Channel MOS FET
RJK0328DPB-01 Silicon N-Channel MOS FET
RJK03A04DPA Silicon N Channel Power MOS FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RJK0330DPB-01 Silicon N Channel Power MOS FET Power Switching Features  High speed switching  Capable of 4.5 V gate drive  Low drive current  High density mounting  Low on-resistance RDS(on) = 2.1 m typ. (at VGS = 10 V)  Pb-free  Halogen-free Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 1 234 4 G Preliminary Datasheet R07DS0266EJ0500 (Previous: REJ03G1639-0400) Rev.5.00 Mar 01, 2011 5 D SSS 123 1, 2, 3 Source 4 Gate 5 Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal resistance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2.