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RJK1560DPP-M0 - N-Channel Power MOSFET

Description

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Features

  • Capable of 2.5 V gate drive.
  • Low on-resistance RDS(on) = 0.043  typ. (at ID = 10 A, VGS = 4 V, Ta = 25C).
  • Low leakage current.
  • High speed switching R07DS0270EJ0100 Rev.1.00 Mar 07, 2011 Outline.

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Preliminary Datasheet RJK1560DPP-M0 Silicon N Channel MOS FET High Speed Power Switching Features  Capable of 2.5 V gate drive  Low on-resistance RDS(on) = 0.043  typ. (at ID = 10 A, VGS = 4 V, Ta = 25C)  Low leakage current  High speed switching R07DS0270EJ0100 Rev.1.00 Mar 07, 2011 Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) D G 1. Gate 2. Drain 3. Source 1 2 3 S www.DataSheet.co.kr Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
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