RJK4018DPK Overview
Preliminary Datasheet RJK4018DPK Silicon N Channel MOS FET High Speed Power Switching.
RJK4018DPK Key Features
- Low on-resistance RDS(on) = 0.085 typ. (at ID = 21.5 A, VGS = 10 V, Ta = 25C)
- Low leakage current
- High speed switching