RJK4018DPK Datasheet | Renesas

Preliminary Datasheet Silicon N Channel MOS FET High Speed Power Switching Features - Low on-resistance RDS(on) = 0.085  typ. (at ID = 21.5 A, VGS = 10 V, Ta = 25C) - Low leakage current - High speed switching R07DS0215EJ0200 (Previous: REJ03G1490-0100) Rev2.00 Dec 03, 2010 Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P) 1. Gate 2. Drain (Flange) 3....