RJK6012DPE Datasheet | Renesas

Preliminary Datasheet Silicon N Channel MOS FET High Speed Power Switching Features - Low on-resistance RDS(on) = 0.77  typ. (at ID = 5 A, VGS = 10 V, Ta = 25C) - Low leakage current - High speed switching R07DS0445EJ0300 (Previous: REJ03G1481-0200) Rev.3.00 Jun 17, 2011 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Source 4. Drain G 2...