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RJK6012DPE Datasheet N-channel Power MOSFET

Manufacturer: Renesas

Overview: Preliminary Datasheet RJK6012DPE Silicon N Channel MOS FET High Speed Power.

Key Features

  • Low on-resistance RDS(on) = 0.77  typ. (at ID = 5 A, VGS = 10 V, Ta = 25C).
  • Low leakage current.
  • High speed switching R07DS0445EJ0300 (Previous: REJ03G1481-0200) Rev.3.00 Jun 17, 2011 Outline.

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