RJK6012DPE Description
Preliminary Datasheet RJK6012DPE Silicon N Channel MOS FET High Speed Power Switching.
RJK6012DPE Key Features
- Low on-resistance RDS(on) = 0.77 typ. (at ID = 5 A, VGS = 10 V, Ta = 25C)
- Low leakage current
- High speed switching