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RJK6012DPP-A0
600V - 10A - MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 0.77 typ. (at ID = 5 A, VGS = 10 V, Ta = 25 C)
Low leakage current High speed switching Quality grade: Standard
Outline
RENESAS Package code: PRSS0003AP-A (Package name: TO-220FPA)
D
12 3
G S
Datasheet
R07DS1420EJ0102 Rev.1.02
Nov.15.2019
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
(Ta = 25 C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
600
V
Gate to source voltage
VGSS
30
V
Drain current
ID Note4
10
A
Drain peak current
ID (pulse)Note1
20
A
Body-drain diode reverse drain current
IDR
10
A
Body-drain diode reverse drain peak current
IDR (pulse) Note1
20
A
Avalanche current
IAP Note3
3
A
Avalanche energy
EAR Note3
0.
RJK6012DPP-A0 Datasheet
