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RJK60S7DPQ-E0 - High Speed Power Switching SJ MOS FET

Description

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Features

  • Superjunction MOSFET.
  • Low on-resistance RDS(on) = 0.1  typ. (at ID = 15 A, VGS = 10 V, Ta = 25C).
  • High speed switching tf = 9 ns typ. (at ID = 15 A, VGS = 10 V, RL = 20 , Rg = 10 , Ta = 25C) Outline.

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Datasheet Details

Part number RJK60S7DPQ-E0
Manufacturer Renesas Electronics
File Size 197.06 KB
Description High Speed Power Switching SJ MOS FET
Datasheet download datasheet RJK60S7DPQ-E0 Datasheet
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Full PDF Text Transcription

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Preliminary Datasheet RJK60S7DPQ-E0 600V - 30A - SJ MOS FET High Speed Power Switching R07DS0736EJ0300 Rev.3.00 Dec 10, 2012 Features  Superjunction MOSFET  Low on-resistance RDS(on) = 0.1  typ. (at ID = 15 A, VGS = 10 V, Ta = 25C)  High speed switching tf = 9 ns typ. (at ID = 15 A, VGS = 10 V, RL = 20 , Rg = 10 , Ta = 25C) Outline RENESAS Package code: PRSS0003ZE-A (Package name: TO-247) D 4 123 G S 1. Gate 2. Drain 3. Source 4.
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