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RJK60S3DPD - High Speed Power Switching MOSFET

Description

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Features

  • Superjunction MOSFET.
  • Low on-resistance RDS(on) = 0.35  typ. (at ID = 6 A, VGS = 10 V, Ta = 25C).
  • High speed switching tf = 21 ns typ. (at ID = 6 A, VGS = 10 V, RL = 50 , Rg = 10 , Ta = 25C) Outline.

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Datasheet Details

Part number RJK60S3DPD
Manufacturer Renesas Electronics
File Size 185.61 KB
Description High Speed Power Switching MOSFET
Datasheet download datasheet RJK60S3DPD Datasheet
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Full PDF Text Transcription

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RJK60S3DPD 600V - 12A - SJ MOS FET High Speed Power Switching Preliminary Datasheet R07DS0731EJ0300 Rev.3.00 Oct 12, 2012 Features  Superjunction MOSFET  Low on-resistance RDS(on) = 0.35  typ. (at ID = 6 A, VGS = 10 V, Ta = 25C)  High speed switching tf = 21 ns typ. (at ID = 6 A, VGS = 10 V, RL = 50 , Rg = 10 , Ta = 25C) Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 D 12 3 1. Gate G 2. Drain 3. Source 4.
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