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RJK60S4DPE - High Speed Power Switching SJ MOS FET

Description

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Features

  • Superjunction MOSFET.
  • Low on-resistance RDS(on) = 0.23  typ. (at ID = 8 A, VGS = 10 V, Ta = 25C).
  • High speed switching tf = 21 ns typ. (at ID = 8 A, VGS = 10 V, RL = 37.5 , Rg = 10 , Ta = 25C) Outline.

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Datasheet Details

Part number RJK60S4DPE
Manufacturer Renesas Electronics
File Size 187.67 KB
Description High Speed Power Switching SJ MOS FET
Datasheet download datasheet RJK60S4DPE Datasheet
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Full PDF Text Transcription

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Preliminary Datasheet RJK60S4DPE 600V - 16A - SJ MOS FET High Speed Power Switching R07DS0733EJ0200 Rev.2.00 Oct 12, 2012 Features  Superjunction MOSFET  Low on-resistance RDS(on) = 0.23  typ. (at ID = 8 A, VGS = 10 V, Ta = 25C)  High speed switching tf = 21 ns typ. (at ID = 8 A, VGS = 10 V, RL = 37.5 , Rg = 10 , Ta = 25C) Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 4 123 G D S 1. Gate 2. Drain 3. Source 4.
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