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RJK60S5DPQ-E0 - High Speed Power Switching MOSFET

Description

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Features

  • Superjunction MOSFET.
  • Low on-resistance RDS(on) = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C).
  • High speed switching tf = 23 ns typ. (at ID = 10 A, VGS = 10 V, RL = 30 , Rg = 10 , Ta = 25C) Outline.

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Datasheet Details

Part number RJK60S5DPQ-E0
Manufacturer Renesas Electronics
File Size 206.49 KB
Description High Speed Power Switching MOSFET
Datasheet download datasheet RJK60S5DPQ-E0 Datasheet
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Full PDF Text Transcription

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RJK60S5DPQ-E0 600V - 20A - SJ MOS FET High Speed Power Switching Preliminary Datasheet R07DS0734EJ0200 Rev.2.00 Jan 23, 2013 Features  Superjunction MOSFET  Low on-resistance RDS(on) = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  High speed switching tf = 23 ns typ. (at ID = 10 A, VGS = 10 V, RL = 30 , Rg = 10 , Ta = 25C) Outline RENESAS Package code: PRSS0003ZE-A (Package name: TO-247) D 4 123 G S 1. Gate 2. Drain 3. Source 4.
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