RJP1CS03DWA - IGBT

This page provides the datasheet information for the RJP1CS03DWA, a member of the RJP1CS03DWT IGBT family.

Product Overview

Renesas

Datasheet Details

Part number	RJP1CS03DWA
Manufacturer	Renesas
File Size	129.33 KB
Description	IGBT
Datasheet	RJP1CS03DWA Datasheet
Additional preview pages of the RJP1CS03DWA datasheet.

RJP1CS03DWA Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.

Features

Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C).
High speed switching.
Short circuit withstands time (10 s min. ) R07DS0826EJ0001 Rev.0.01 Jul 03, 2012 Outline Die: RJP1CS03DWT-80 2 C 3 1G 1 Wafer: RJP1CS03DWA-80 2 1. Gate 2. Collector (The back) 3. Emitter www. DataSheet. net/ E 3 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Junc.

📁 Similar Datasheet

RJP020N06 - Drive Nch MOS FET (Rohm)
RJP020N06FRA - Power MOSFET (ROHM)
RJP020N06T100 - N-Channel MOSFET (VBsemi)
RJP2557DPK - IGBT (Renesas Technology)
RJP3053DPP - IGBT (Renesas Technology)
RJP3054DPP - IGBT (Renesas Technology)
RJP3055DPP - IGBT (Renesas Technology)
RJP3056DPK - IGBT (Renesas Technology)
RJP3057DPK - IGBT (Renesas Technology)
RJP3063DPP - IGBT (Renesas Technology)

Other Datasheets by Renesas

Published: Jul 21, 2012 |