RJP1CS03DWT Datasheet | Renesas

Preliminary Datasheet RJP1CS03DWT/RJP1CS03DWA 1250V - 30A - IGBT Application: Inverter Features - Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C) - High speed switching - Short circuit withstands time (10 s min.) R07DS0826EJ0001 Rev.0.01 Jul 03, 2012 Outline Die: RJP1CS03DWT-80 2 C 3 1G 1 Wafer: RJP1CS03DWA-80 1. Gate 2. Collector (The back) 3. Emitter .DataSheet.net/ E...