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RJP65S03DWT - IGBT

Description

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Features

  • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C).
  • High speed Switching.
  • Short circuit withstands time (10 s min. ) R07DS0820EJ0001 Rev.0.01 Jul 05, 2012 Outline Die: RJP65S03DWT-80 2 C 3 1G 1 2 Wafer: RJP65S03DWA-80 1. Gate 2. Collector (The back) 3. Emitter www. DataSheet. net/ E 3 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Junc.

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Preliminary Datasheet RJP65S03DWT/RJP65S03DWA 650V - 30A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C)  High speed Switching  Short circuit withstands time (10 s min.) R07DS0820EJ0001 Rev.0.01 Jul 05, 2012 Outline Die: RJP65S03DWT-80 2 C 3 1G 1 2 Wafer: RJP65S03DWA-80 1. Gate 2. Collector (The back) 3. Emitter www.DataSheet.net/ E 3 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Junction temperature Symbol VCES VGES IC Note1 IC Note1 Tj Ratings 650 ±30 60 30 150 Unit V V A A C Notes: 1. This data is a regulated value in evaluation package. R07DS0820EJ0001 Rev.0.
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