RJP65S05DWA Datasheet | Renesas

Preliminary Datasheet RJP65S05DWT/RJP65S05DWA 650V - 75A - IGBT Application: Inverter Features - Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 75 A, VGE = 15 V, Ta = 25C) - High speed Switching - Short circuit withstands time (10 s min.) R07DS0822EJ0001 Rev.0.01 Jul 05, 2012 Outline Die: RJP65S05DWT-80 2 C 3 Wafer: RJP65S05DWA-80 1G 1. Gate 2. Collector (The back) 3. Emitter E 3 .DataSheet.net/...