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RJQ6008DPM - IGBT/Diode

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Renesas

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RJQ6008DPM IGBT/Diode by Renesas - Datasheet Preview — Datasheet preview – RJQ6008DPM

Datasheet Details

Part number	RJQ6008DPM
Manufacturer	Renesas
File Size	109.31 KB
Description	IGBT/Diode
Datasheet	RJQ6008DPM Datasheet
Additional preview pages of the RJQ6008DPM datasheet.

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Features

Low collector to emitter saturation voltage VCE(sat) = 2.65 V typ. (IC = 25 A, VGE = 15 V, Ta = 25°C).
Built in fast recovery diode in one package.
Trench gate and thin wafer technology.
High speed switching Preliminary Datasheet R07DS0847EJ0100 Rev.1.00 Jul 17, 2012 Outline.

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Published: Apr 13, 2020 |