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RJQ6008DPM Datasheet IGBT/diode

Manufacturer: Renesas

Overview: RJQ6008DPM 600V - 10A - IGBT and Diode High Speed Power Switching.

Key Features

  • Low collector to emitter saturation voltage VCE(sat) = 2.65 V typ. (IC = 25 A, VGE = 15 V, Ta = 25°C).
  • Built in fast recovery diode in one package.
  • Trench gate and thin wafer technology.
  • High speed switching Preliminary Datasheet R07DS0847EJ0100 Rev.1.00 Jul 17, 2012 Outline.

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RJQ6008DPM Distributor