RJQ6008DPM Description
RJQ6008DPM 600V - 10A - IGBT and Diode High Speed Power Switching.
RJQ6008DPM Key Features
- Low collector to emitter saturation voltage VCE(sat) = 2.65 V typ. (IC = 25 A, VGE = 15 V, Ta = 25°C)
- Built in fast recovery diode in one package
- Trench gate and thin wafer technology
- High speed switching