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RJQ6021DPM - N-Channel IGBT

General Description

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Key Features

  • High speed switching.
  • Low on-state voltage.
  • Built in fast recovery diode in one package R07DS0650EJ0100 Rev.1.00 Jan 23, 2012 Outline.

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Preliminary Datasheet RJQ6021DPM 600V - 10A - IGBT High Speed Power Switching Features • High speed switching • Low on-state voltage • Built in fast recovery diode in one package R07DS0650EJ0100 Rev.1.00 Jan 23, 2012 Outline RENESAS Package code: PRSS0005ZB-A) (Package name: TO-3PFM) 2 1, 3 1. Anode 2. Cathode 3. Anode, Collector 4. Emitter 5. Gate 5 12 34 5 4 Absolute Maximum Ratings IGBT Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Junction temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% www.DataSheet.co.