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RJS6005WDPK - SiC Schottky Barrier Diode

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Features

  • New semiconductor material: Silicon Carbide Diode.
  • No reverse recovery / No forward recovery Outline.

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Datasheet Details

Part number RJS6005WDPK
Manufacturer Renesas
File Size 66.05 KB
Description SiC Schottky Barrier Diode
Datasheet download datasheet RJS6005WDPK Datasheet
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RJS6005WDPK 600V - 30A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 4 12 3 Preliminary Datasheet R07DS0901EJ0201 Rev.2.01 Jan 31, 2014 2, 4 13 1. Anode 2. Cathode 3. Anode 4. Cathode Absolute Maximum Ratings Item Maximum reverse voltage Continuous forward current Peak surge forward current Junction temperature Storage temperature Notes: 1. Per leg/device Symbol VRM IF Note1 IFSM Note1 Tj Tstg Electrical Characteristics Item Forward voltage Reverse current Reverse recovery time Notes: 1. Per leg/device 2. Per leg Symbol VF Note2 IR Note1 trr Note2 Min ⎯ ⎯ ⎯ Typ 1.
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