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TBB1005 - Twin Built in Biasing Circuit MOS FET IC

Key Features

  • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Suitable for World Standard Tuner RF amplifier. Very useful for total tuner cost reduction. Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions.
  • Provide mini mold packages; CMPAK-6 Outline.

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Datasheet Details

Part number TBB1005
Manufacturer Renesas
File Size 168.46 KB
Description Twin Built in Biasing Circuit MOS FET IC
Datasheet download datasheet TBB1005 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TBB1005 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier REJ03G0843-0900 Rev.9.00 Aug 22, 2006 Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Suitable for World Standard Tuner RF amplifier. Very useful for total tuner cost reduction. Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. • Provide mini mold packages; CMPAK-6 Outline RENESAS Package code: PTSP0006JA-A (Package name: CMPAK-6) 6 5 4 2 1 3 1. Drain(1) 2. Source 3. Drain(2) 4. Gate-1(2) 5. Gate-2 6. Gate-1(1) Notes: 1. Marking is “EM”. 2. TBB1005 is individual type number of RENESAS TWIN BBFET. www.DataSheet.co.kr Rev.9.00 Aug 22, 2006 page 1 of 9 Datasheet pdf - http://www.DataSheet4U.