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TBB1008 - Twin Built in Biasing Circuit MOS FET IC

Key Features

  • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.
  • Suitable for World Standard Tuner RF amplifier.
  • Very useful for total tuner cost reduction.
  • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions.
  • Provide mini mold packages; CMPAK-6 Outline www. DataSheet. co. kr CMPAK-6 6 5 4 2 1 3 1. Gate-1(1) 2. Source 3. Drain(1) 4. Drain(2) 5. Gate-2 6. Gate-1(.

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Datasheet Details

Part number TBB1008
Manufacturer Renesas
File Size 288.12 KB
Description Twin Built in Biasing Circuit MOS FET IC
Datasheet download datasheet TBB1008 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.