TP65H100G4LSGB
TP65H100G4LSGB is 650V SuperGaN GaN FET manufactured by Renesas.
Specifications in this document are tentative and subject to change
650V Super Ga N® Ga N FET in PQFN (source tab)
Description
The TP65H100G4LSGB 650V, 92mΩ Gallium Nitride (Ga N) FET is a normally-off device using Renesas’s Gen IV platform. It bines a state-of-the-art high voltage Ga N HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.
The Gen IV Super Ga N® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.
Related Literature
- Printed Circuit Board Layout and Probing
- Remendations for Vapor Phase Reflow
- Remended External Circuitry for Ga N FETs
- PQFN Tape and Reel Information
Product Series and Ordering Information
Part Number
Package Package
Configuration
TP65H100G4LSGB-TR- 8x8 PQFN
Source
- “-TR” suffix refers to tape and reel. Refer to AN0012 for details. TP65H100G4LSGB PQFN (Bottom view)
Pin 5 D D D D Pin 8
Pin 4
G KS S S
Pin 1
S Pin 9
G KS
Cascode Schematic Symbol Cascode Device Structure
Features
- Gen IV technology
- JEDEC-qualified Ga N technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
- Wide gate safety...
