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TP65H100G4LSGB - 650V SuperGaN GaN FET

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Renesas

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TP65H100G4LSGB 650V SuperGaN GaN FET by Renesas - Datasheet Preview — Datasheet preview – TP65H100G4LSGB

Datasheet Details

Part number	TP65H100G4LSGB
Manufacturer	Renesas
File Size	848.69 KB
Description	650V SuperGaN GaN FET
Datasheet	TP65H100G4LSGB Datasheet
Additional preview pages of the TP65H100G4LSGB datasheet.

TP65H100G4LSGB Product details

Description

The TP65H100G4LSGB 650V, 92mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform.

It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.

Features

Gen IV technology.
JEDEC-qualified GaN technology.
Dynamic RDS(on)eff production tested.
Robust design, defined by.
Wide gate safety margin.
Transient over-voltage capability.
Very low QRR.
Reduced crossover loss.
RoHS compliant and Halogen-free packaging.
Pin-to-pin drop in with e-mode (higher Vt) Benefits.
Achieves increased efficiency in both hard- and soft-switched circuits.
Increased power density.
Reduced sys.

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Published: Jan 30, 2025 |